Earlier this month, Fudan University in China introduced a new flash memory technology called Poxiao. This can be introduced as the world’s fastest flash memory technology.
Accordingly, this new Poxiao Hard Drive has the ability to rewrite and erase data in 400 picoseconds. That is, it is 100,000 times faster than existing hard drives.
According to information reported on the Internet, this flash memory technology uses Ferroelectric Tunnel Junction (FTJ) and can transfer electronic currents very quickly. It also consumes less power than the existing NAND flash memory.
Speed: Writes data at 25 billion bits per second.
Response time: Writes and erases data within 400 picoseconds.
Energy efficiency: FTJ technology reduces energy consumption by about 50%.
Uses: Suitable for fields that require high-speed storage such as AI, cloud computing, and big data processing.
It is expected that the launch of Poxiao will be used in data centers, supercomputers, and consumer electronics, which could make a big difference in the world of technology.
